Growth of α-Fe2O3 nano-wires and its field emission characteristics - Details

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Abstract：

The　α-Fe2O3　nano-wires　were　grown　on　99%　pure　iron　substrates　by　thermal　oxidation　in　air.　The　impacts　of　growth　conditions,　including　the　oxidation　temperature　and　time,　on　its　microstructures　and　emission　properties　were　evaluated.　The　nano-wires　were　characterized　with　X-ray　diffraction,　and　scanning　electron　microscopy.　The　results　show　that　the　oxidation　temperature　and　time　strongly　affect　the　microstructures　and　emission　characteristics　of　the　nano-wires.　For　instance,　at　600°C,　the　(110)　and　(300)　preferentially　oriented　nano-wire　were　obtained.　For　a　short　oxidation　time,　the　nano-flakes　dominated;and　as　the　time　increased,　the　nano-wires　gradually　showed　up,　growing　in　number　and　in　length.　The　aspect　ratio　and　density　of　the　nano-wire,　grown　at　400°C　for　4　h,　were　found　to　be　optimal　for　field　emission,　with　an　on-set　field　of　2.3　V/m　and　a　fairly　uniform　and　stable　emission.

Keyword：

α-Fe2O3; Field emission; Thermal oxidation in air; Thermal oxidation time

Community：

[ 1 ] [Guo, F.]College of Physics and Information Engineering, Fuzhou University, Fuzhou 350002, China
[ 2 ] [Ye, Y.]College of Physics and Information Engineering, Fuzhou University, Fuzhou 350002, China
[ 3 ] [Hong, C.]College of Physics and Information Engineering, Fuzhou University, Fuzhou 350002, China
[ 4 ] [Li, S.]College of Physics and Information Engineering, Fuzhou University, Fuzhou 350002, China
[ 5 ] [Hu, L.]College of Physics and Information Engineering, Fuzhou University, Fuzhou 350002, China
[ 6 ] [Guo, T.]College of Physics and Information Engineering, Fuzhou University, Fuzhou 350002, China
[ 7 ] [Jiang, Y.]State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

Reprint 's Address：

[Ye, Y.]College of Physics and Information Engineering, Fuzhou University, Fuzhou 350002, China

Email：

yeyun07@fzu.edu.cn

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Source ：

Journal of Vacuum Science and Technology

ISSN： 1672-7126

Year： 2013

Issue： 1

Volume： 33

Page： 49-53

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SCOPUS Cited Count：

ESI Highly Cited Papers on the List： 0 Unfold All

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Chinese Cited Count：

30 Days PV： 1

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