Al-doped ZnS thin films for buffer layers of solar cells prepared by chemical bath deposition - Details

author：

Liao, J. (Liao, J..) ^[1] | Cheng, S. (Cheng, S..) ^[2] | Zhou, H. (Zhou, H..) ^[3] | Long, B. (Long, B..) ^[4]

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Abstract：

In　this　reported　study,　Al-doped　ZnS　(ZnS:Al)　thin　films　were　fabricated　by　chemical　bath　deposition　in　alkaline　condition　along　with　a　stable　complexing　agent　of　sodium　citrate　in　ammonia/ammonium　chloride　buffer　solution.　Al　concentrations　were　varied　from　0　to　10　at.%.　The　structure　and　composition　of　the　films　were　confirmed　by　X-ray　diffraction　(XRD),　Fourier　transform　infrared　(FTIR)　spectra　and　Raman　spectroscopy.　The　XRD,　FTIR　and　Raman　spectra　confirmed　the　existence　of　ZnS　and　Al-S　bond,　which　had　some　effects　on　the　properties　of　the　films.　The　optical　characteristics　indicated　the　changes　of　the　bandgap　with　the　Al-doping　concentrations.　The　resistivity　of　the　ZnS:Al　films　with　different　Al-doping　concentrations　after　annealing　was　analysed　and　the　sample　with　6　at.%　Al　concentration　had　the　lowest　resistivity　of　9.9　×　10　4　Ω　cm.　©　The　Institution　of　Engineering　and　Technology　2013.

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[ 1 ] [Liao, J.]State Key Laboratory Breeding Base of Photocatalysis, College of Chemistry and Chemical Engineering, Fuzhou University, Fuzhou 350108, China
[ 2 ] [Liao, J.]Institute of Micro-Nano Devices and Solar Cells, College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
[ 3 ] [Cheng, S.]State Key Laboratory Breeding Base of Photocatalysis, College of Chemistry and Chemical Engineering, Fuzhou University, Fuzhou 350108, China
[ 4 ] [Cheng, S.]Institute of Micro-Nano Devices and Solar Cells, College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
[ 5 ] [Zhou, H.]Institute of Micro-Nano Devices and Solar Cells, College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
[ 6 ] [Long, B.]Institute of Micro-Nano Devices and Solar Cells, College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China

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Micro and Nano Letters

ISSN： 1750-0443

Year： 2013

Issue： 4

Volume： 8

Page： 211-214

0 . 7 9 9

JCR@2013

0 . 9 7 5

JCR@2018

JCR Journal Grade：3

CAS Journal Grade：4

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ESI Highly Cited Papers on the List： 0 Unfold All

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30 Days PV： 2

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