The　Al　doped　ZnO(ZnO:Al)　films　were　deposited　on　glass　substrates　with　direct　current　(DC)　or　radio　frequency　(RF)　magnetron　sputtering　by　using　an　alloy　or　ceramic　target.　The　influence　of　the　substrate　temperature　on　the　crystal　structure,　surface　morphology,　optical　and　electronic　properties　of　the　ZnO:Al　films　was　investigated.　Highly　transparent　ZnO:Al　films　with　optical　band　gap　of　3.25-3.29eV　were　deposited　by　sputtering　a　ceramic　target.　The　X-ray　diffraction　results　show　that　all　ZnO:Al　films　grow　in　a　hexagonal-wurtzite　phase　with　highly　c-axis　preferred　orientation　and　the　average　crystal　size　increases　upon　the　promotion　of　substrate　temperatures.　The　resistivity　of　ZnO:Al　films　decreases　with　an　increasing　substrate　temperature.　The　resistivity　further　decreases　to　3.566×10-3　Ω·cm　with　annealing　in　nitrogen.　©The　Electrochemical　Society.