Carrier　transport　in　a　volatile　memory　device　utilizing　self-assembled　tin　dioxide　quantum　dots　(SnO2　QDs)　embedded　in　a　polyimide　(PI)　layer　was　investigated.　Current-voltage　(I-V)　curves　showed　that　the　Ag/PI/SnO　2　QDs/PI/indium-tin-oxide　(ITO)　device　memory　device　had　the　ability　to　write,　read,　and　refresh　the　electric　states　under　various　bias　voltages.　The　capacitance-voltage　(C-V)　curve　for　Ag/PI/SnO2　QDs/PI/　p-Si　capacitor　exhibited　a　counterclockwise　hysteresis,　indicative　of　the　existence　of　sites　occupied　by　carriers.　The　origin　of　the　volatile　memory　effect　was　attributed　to　holes　trapping　in　the　shallow　traps　formed　between　QD　and　PI　matrix,　which　determines　the　carrier　transport　characteristics　in　the　hybrid　memory　device.　©　2011　The　Japan　Society　of　Applied　Physics.