Phase transition originating from order-disorder transformations of carboxy oxygen atoms coupled with dynamic proton motions in [PhCH2NH(CH 3)2]2C2O4• H 2C2O4 - Details

author：

Indexed by：

Scopus

Abstract：

A　new　molecular　phase　transition　material,　[PhCH2NH(CH　3)2]2C2O4•　H　2C2O4,　which　undergoes　a　reversible　phase　transition　at　151.6　K,　has　been　successfully　synthesized.　Differential　scanning　calorimetry　(DSC),　specific　heat　capacity,　and　dielectric　measurements　confirm　its　reversible　phase　transition　with　a　large　thermal　hysteresis　of　15.1　K,　demonstrating　that　the　phase　transition　is　typical　first　order.　Variable-temperature　single-crystal　X-ray　diffraction　analyses　reveal　that　the　order-disorder　transformations　of　carboxy　oxygen　atoms　induce　the　structural　phase　transition.　A　slight　reorientation　of　the　oxalic　acid　unit　is　discovered　to　accompany　the　ordering　of　carboxy　oxygen　atoms　at　low　temperature.　The　DSC　measurement　result　of　the　deuterated　analog　is　different　to　that　of　1,　indicating　that　proton　dynamic　motions　in　hydrogen　bonds　also　contribute　to　the　phase　transition.　Ups　and　downs:　A　new　solid-state　material　shows　a　reversible　first-order　phase　transition.　Unique　order-disorder　transformations　of　the　carboxy　oxygen　atoms　and　proton　dynamic　motions　in　hydrogen　bonds　induce　transition　between　the　low　and　high　temperature　phases.　©　2014　WILEY-VCH　Verlag　GmbH　&　Co.　KGaA,　Weinheim.

Keyword：

crystal growth; isotope effects; order-disorder; oxalic acid; phase transitions

Community：

[ 1 ] [Tang, Y.]College of Chemistry and Chemical Engineering, Fuzhou University, Fuzhou 350108, China
[ 2 ] [Tang, Y.]Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China
[ 3 ] [Tang, Y.]State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China
[ 4 ] [Ji, C.]Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China
[ 5 ] [Sun, Z.]Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China
[ 6 ] [Sun, Z.]State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China
[ 7 ] [Sun, Z.]State Key Laboratory of Crystal Material, Shandong University, Jinan 250100, China
[ 8 ] [Zhang, S.]Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China
[ 9 ] [Zhang, S.]State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China
[ 10 ] [Chen, T.]Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China
[ 11 ] [Chen, T.]State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China
[ 12 ] [Luo, J.]College of Chemistry and Chemical Engineering, Fuzhou University, Fuzhou 350108, China
[ 13 ] [Luo, J.]Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China
[ 14 ] [Luo, J.]State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China

Reprint 's Address：

[Luo, J.]College of Chemistry and Chemical Engineering, Fuzhou University, Fuzhou 350108, China

Email：

jhluo@fjirsm.ac.cn

Show more details

Related Keywords：

Source ：

Chemistry - An Asian Journal

ISSN： 1861-4728

Year： 2014

Issue： 7

Volume： 9

Page： 1771-1776

4 . 5 8 7

JCR@2014

3 . 5 0 0

JCR@2023

ESI HC Threshold：268

JCR Journal Grade：1

CAS Journal Grade：2

Cited Count：

WoS CC Cited Count：

SCOPUS Cited Count： 23

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 2

Affiliated Colleges：

Get Fulltext

DOI Library Discovery Baidu Scholar Search SCOPUS

Type
Departments

All Years Choose Year From to