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author:

Weng, Z. (Weng, Z..) [1] | Zhou, B. (Zhou, B..) [2] | Li, S. (Li, S..) [3] | Huang, W. (Huang, W..) [4] | Liu, Q. (Liu, Q..) [5] | Yang, J. (Yang, J..) [6]

Indexed by:

Scopus PKU CSCD

Abstract:

Sm-Fe-B GMFs were prepared on glass substrate by ion beam sputtering deposition method (IBSD). Different stresses were applied during an annealing treatment and the effects of free and stress annealing to magnetic domain structure. The soft magnetic properties and magnetostriction for Sm-Fe-B GMFs were studied. The result showed that the magnetic domain structure of Sm-Fe-B GMFs changed significantly by free annealing and stress annealing, and the soft magnetic properties and magnetostrictive properties in low field were greatly improved for the change of microstructure and stress state; Compared with free-annealing-state samples, stress-annealing-state sample had the obviously vertical anisotropy, and the saturated magnetostriction was improved greatly, although the magnetic sensitivity decreased slightly in low field. ©, 2014, Chinese Rare Earth Society. All right reserved.

Keyword:

IBSD; Magnetic domain; Magnetic properties; Sm-Fe-B GMF; Stress annealing

Community:

  • [ 1 ] [Weng, Z.]School of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, China
  • [ 2 ] [Zhou, B.]School of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, China
  • [ 3 ] [Li, S.]School of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, China
  • [ 4 ] [Huang, W.]Department of Materials Engineering, ZhiCheng College, Fuzhou University, Fuzhou, 350002, China
  • [ 5 ] [Liu, Q.]School of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, China
  • [ 6 ] [Yang, J.]Department of Materials Engineering, ZhiCheng College, Fuzhou University, Fuzhou, 350002, China

Reprint 's Address:

  • [Zhou, B.]School of Materials Science and Engineering, Fuzhou UniversityChina

Email:

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Source :

Journal of the Chinese Rare Earth Society

ISSN: 1000-4343

Year: 2014

Issue: 4

Volume: 32

Page: 425-429

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 3

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