In　this　work,　we　present　a　simple　and　facile　one　step　synthesis　strategy　to　prepare　CH3NH3PbBr3　perovskite　quantum　dots　and　apply　them　into　the　nonvolatile　memory.　Resistive　switching　phenomenon　was　observed　in　this　perovskite　quantum　dots　and　polymer　composite　based　memory　device　with　the　ON/OFF　current　ratio　larger　than　103　as　well　as　good　reproducibility　and　reliability.　Flexible　memory　was　also　demonstrated,　and　a　possible　resistance　switching　mechanism　was　discussed.　Our　work　paves　a　way　for　the　application　of　organolead　halide　perovskite　quantum　dots　in　flexible　and　transparent　nonvolatile　memories.　©　2017　Author(s).