Effects of strain in low-dimensional semiconductor structures - Details

author：

Yu, J.L. (Yu, J.L..) ^[1] | Chen, Y.H. (Chen, Y.H..) ^[2] | Liu, Y. (Liu, Y..) ^[3] | Cheng, S.Y. (Cheng, S.Y..) ^[4]

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Abstract：

Strain　state　in　low-dimensional　semiconductor　structures　has　a　significant　influence　on　their　optical　and　electrical　properties,　and　strain　technology　is　widely　utilized　to　tailor　the　physical　properties　of　semiconductor　materials　and　devices,　such　as　to　engineer　the　band　gap　and　the　carrier　mobility　of　semiconductor　heterostructures.　The　paper　reviews　the　effect　of　strain　on　semiconductor　quantum　wells　(QWs),　nanowires,　and　quantum　dots　(QDs).　The　recent　researches　on　the　strain　distribution　and　engineering　of　the　physical　properties　by　strain　in　(In,Ga)As,　(In,Ga)P,　III-V　nitrogen,　ZnO　and　SiGe　semiconductor　QWs,　nanowires　and　QDs　are　overviewed.　Copyright　©　2017　American　Scientific　Publishers　All　rights　reserved.

Keyword：

GaAs; GaN; Ge; InGaAs; InGaN; InN; Nanowires; Quantum Dots; Quantum Wells; Si; Strain; ZnO

Community：

[ 1 ] [Yu, J.L.]Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou, China
[ 2 ] [Yu, J.L.]Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, University of Chinese Academy of Sciences, Beijing, 100083, China
[ 3 ] [Chen, Y.H.]Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, University of Chinese Academy of Sciences, Beijing, 100083, China
[ 4 ] [Liu, Y.]Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, University of Chinese Academy of Sciences, Beijing, 100083, China
[ 5 ] [Cheng, S.Y.]Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou, China
[ 6 ] [Cheng, S.Y.]Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering, Changzhou University, Changzhou, Jiangsu, 213164, China

Reprint 's Address：

[Yu, J.L.]Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou UniversityChina

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Source ：

Nanoscience and Nanotechnology Letters

ISSN： 1941-4900

Year： 2017

Issue： 7

Volume： 9

Page： 1066-1082

2 . 9 1 7

JCR@2017

1 . 1 2 8

JCR@2019

JCR Journal Grade：2

CAS Journal Grade：3

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WoS CC Cited Count：

SCOPUS Cited Count： 3

ESI Highly Cited Papers on the List： 0 Unfold All

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30 Days PV： 0

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