Diode-Pumped c-Cut Nd:Lu0.99La0.01VO4 Self-Stimulated Raman Laser at 1181 nm - Details

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The　self-stimulated　Raman　laser　operation　of　a　Nd:Lu0.99La0.01VO4　new　crystal　is　presented.　A　0.3　at.%　Nd　doped　Lu0.99La0.01VO4　crystal　in　dimensions　30mm3　is　adopted　as　the　self-stimulated　Raman　crystal.　At　a　pulse　repetition　frequency　of　14　kHz,　average　output　powers　of　240mW　for　the　first　Stokes　light　at　1181nm　and　660mW　for　the　fundamental　light　at　1068nm　are　obtained　under　an　incident　pump　power　of　5.5　W.　The　pulse　widths　of　the　first　Stokes　light　and　fundamental　light　are　about　15　and　25　ns.　The　slope　efficiencies　are　about　12.7%　and　18.8%　with　respect　to　the　incident　pump　power.　©　2015　Chinese　Physical　Society　and　IOP　Publishing　Ltd.

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[ 1 ] [Cai, W.-Y.]College of Physics and Electronic Information, Wenzhou University, Wenzhou, 325035, China
[ 2 ] [Duan, Y.-M.]College of Physics and Electronic Information, Wenzhou University, Wenzhou, 325035, China
[ 3 ] [Li, J.-T.]College of Physics and Electronic Information, Wenzhou University, Wenzhou, 325035, China
[ 4 ] [Yan, L.-F.]College of Physics and Electronic Information, Wenzhou University, Wenzhou, 325035, China
[ 5 ] [Mao, M.-J.]College of Physics and Electronic Information, Wenzhou University, Wenzhou, 325035, China
[ 6 ] [Zhao, B.]College of Chemistry and Chemical Engineering, Fuzhou University, Fuzhou, 350108, China
[ 7 ] [Zhu, H.-Y.]College of Physics and Electronic Information, Wenzhou University, Wenzhou, 325035, China

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[Duan, Y.-M.]College of Physics and Electronic Information, Wenzhou UniversityChina

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Chinese Physics Letters

ISSN： 0256-307X

Year： 2015

Issue： 3

Volume： 32

0 . 8 7 5

JCR@2015

3 . 5 0 0

JCR@2023

ESI HC Threshold：200

JCR Journal Grade：3

CAS Journal Grade：4

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SCOPUS Cited Count： 4

ESI Highly Cited Papers on the List： 0 Unfold All

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Chinese Cited Count：

30 Days PV： 1

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