Prospects of Zn(O,S) as an alternative buffer layer for Cu2ZnSnS4 thin-film solar cells from numerical simulation - Details

author：

Zhang, H. (Zhang, H..) ^[1] | Cheng, S. (Cheng, S..) ^[2] | Yu, J. (Yu, J..) ^[3] | Zhou, H. (Zhou, H..) ^[4] | Jia, H. (Jia, H..) ^[5]

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Abstract：

Zn(O,S)　is　an　attractive　alternative　to　CdS　as　a　buffer　layer　of　Cu2ZnSnS4　(CZTS)-based　solar　cell　due　to　its　higher　bandgap　and　environmental　friendliness.　In　this　work,　CZTS　solar　cell　with　a　structure　of　CZTS/Zn(O,S)/Al:ZnO　was　simulated　by　Solar　Cell　Capacitance　Simulator　(SCAPS).　The　impacts　of　thickness　and　acceptor　concentration　of　CZTS,　thickness　and　donor　concentration　of　Zn(O,S)　and　operating　temperature　on　the　performance　of　CZTS　solar　cells　were　investigated.　It　has　been　obtained　that　the　optimum　thickness　of　CZTS　is　between　2000　and　3000　nm　and　that　of　Zn(O,S)　is　about　50　nm.　The　suitable　doping　concentrations　of　CZTS　and　Zn(O,S)　layers　are　around　1016　and　1017　cm-3,　respectively.　The　temperature　coefficient　of　efficiency　is　about　-0.023　%/K　in　the　CZTS　solar　cell.　All　these　simulation　results　will　provide　some　important　guidelines　for　fabricating　high　efficient　CZTS　solar　cells.　©　The　Institution　of　Engineering　and　Technology　2016.

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Community：

[ 1 ] [Zhang, H.]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou, 350108, China
[ 2 ] [Zhang, H.]Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering, Changzhou, 213164, China
[ 3 ] [Cheng, S.]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou, 350108, China
[ 4 ] [Cheng, S.]Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering, Changzhou, 213164, China
[ 5 ] [Yu, J.]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou, 350108, China
[ 6 ] [Yu, J.]Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering, Changzhou, 213164, China
[ 7 ] [Zhou, H.]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou, 350108, China
[ 8 ] [Zhou, H.]Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering, Changzhou, 213164, China
[ 9 ] [Jia, H.]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou, 350108, China
[ 10 ] [Jia, H.]Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering, Changzhou, 213164, China

Reprint 's Address：

[Cheng, S.]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou UniversityChina

Email：

sycheng@fzu.edu.cn

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Source ：

Micro and Nano Letters

ISSN： 1750-0443

Year： 2016

Issue： 7

Volume： 11

Page： 386-390

0 . 7 2 3

JCR@2016

0 . 9 7 5

JCR@2018

JCR Journal Grade：4

CAS Journal Grade：4

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SCOPUS Cited Count： 24

ESI Highly Cited Papers on the List： 0 Unfold All

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30 Days PV： 0

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