Inkjet Printed Metal Oxide Heterojunction Thin-film Transistor [喷墨打印金属氧化物异质结晶体管] - Details

author：

Yang, W.-Y. (Yang, W.-Y..) ^[1] | Zhang, G.-C. (Zhang, G.-C..) ^[2] | Cui, Y. (Cui, Y..) ^[3] | Chen, H.-P. (Chen, H.-P..) ^[4]

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Scopus PKU CSCD

Abstract：

In　this　work,　the　electron　transport　limitations　caused　by　oxide　defects　was　overcome　by　replacing　single　layer　semiconductor　channel　with　a　ZnO/IGZO　heterojunction　prepared　by　inkjet　printing.　It　was　found　that　ZnO/IGZO　transistor　exhibited　banded　electron　transport,　and　the　mobility　was　increased　by　about　9　times　and　19　times,　respectively,　to　6.42　cm2/(V•s)　compared　with　single　layer　IGZO　or　ZnO　TFT.　The　switch　ratio　was　increased　by　2　and　4　orders　of　magnitude　respectively,　which　can　reach　1.8×108.　Significant　improvement　in　performance　was　associated　with　the　two-dimensional　electron　gas　formed　between　the　IGZO　and　ZnO　heterointerfaces　due　to　the　large　offset　of　the　conduction　band.　©　2019,　Science　Press.　All　right　reserved.

Keyword：

Heterojunction; Inkjet printing; Metal oxide semiconductor; Two-dimensional electron gas

Community：

[ 1 ] [Yang, W.-Y.]Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350118, China
[ 2 ] [Zhang, G.-C.]Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350118, China
[ 3 ] [Zhang, G.-C.]Research Center for Microelectronics Technology, Fujian University of Technology, Fuzhou, 350118, China
[ 4 ] [Cui, Y.]Changchun Institute of Engineering and Technology, Changchun, 130012, China
[ 5 ] [Chen, H.-P.]Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350118, China

Reprint 's Address：

[Chen, H.-P.]Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou UniversityChina

Email：

hpchen@fzu.edu.cn

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Source ：

Chinese Journal of Luminescence

ISSN： 1000-7032

Year： 2019

Issue： 4

Volume： 40

Page： 497-503

Cited Count：

WoS CC Cited Count： 0

SCOPUS Cited Count： 1

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 0

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