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author:

Gul, S.R. (Gul, S.R..) [1] | Khan, M. (Khan, M..) [2] | Zeng, Y. (Zeng, Y..) [3] | Wu, B. (Wu, B..) [4]

Indexed by:

Scopus

Abstract:

With ab-initio calculations, the geometrical structure, electronic band structure, optical and thermodynamic properties of pure and Ce doped La2Zr2O7 are calculated. Doping Ce at Zr site modified the intrinsic band gap of La2Zr2O7. However, increasing the Ce doping concentration has no considerable effect on the band structure. With the increase in Ce doping concentration, the absorption spectra of the doped La2Zr2O7 is shifted to higher wavelengths and the peaks intensity is reduced. Some of the peaks associated with the intrinsic La2Zr2O7 are disappeared and new peaks are introduced in 3.40% Ce doped La2Zr2O7. Perturbations in the phonons density of states are reduced with the increasing Ce doping concentration. The La16Zr13Ce3O56 system with 3.40% of Ce doping provided the most stable phonons curve among the simulated systems. Interesting behavior is observed in the thermal conductivity of the doped models with the increasing temperature. The thermal conductivity of La16Zr15CeO56 model increases compared to the pure La2Zr2O7. However, further increase in the Ce doping concentration drastically reduced the thermal conductivity values in the range 373-1673 K. The La16Zr13Ce3O56 system (3.4% Ce) provided the lowest thermal conductivity attributed to the high concentration of point defects affecting the phonon scattering. © 2019 IOP Publishing Ltd.

Keyword:

Ce-doping; electronic structure; La2Zr2O7; thermal barrier coatings; thermal conductivity

Community:

  • [ 1 ] [Gul, S.R.]Multiscale Computational Materials Facility, College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350100, China
  • [ 2 ] [Gul, S.R.]State Key Lab of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
  • [ 3 ] [Khan, M.]State Key Lab of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
  • [ 4 ] [Khan, M.]Department of Physics, Kohat University of Science and Technology (KUST), Kohat, 26000, Pakistan
  • [ 5 ] [Zeng, Y.]State Key Lab of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
  • [ 6 ] [Zeng, Y.]Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
  • [ 7 ] [Wu, B.]Multiscale Computational Materials Facility, College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350100, China

Reprint 's Address:

  • [Khan, M.]State Key Lab of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of SciencesChina

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Source :

Materials Research Express

ISSN: 2053-1591

Year: 2019

Issue: 8

Volume: 6

1 . 9 2 9

JCR@2019

1 . 8 0 0

JCR@2023

ESI HC Threshold:236

CAS Journal Grade:4

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 3

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