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author:

Chen, Z. (Chen, Z..) [1] | Li, F. (Li, F..) [2] | Zeng, Q. (Zeng, Q..) [3] | Yang, K. (Yang, K..) [4] | Liu, Y. (Liu, Y..) [5] | Su, Z. (Su, Z..) [6] | Shan, G. (Shan, G..) [7]

Indexed by:

Scopus

Abstract:

Inkjet printing technology is one of the most attractive methods for the realization of full-color patterning for displays. In this work, we successfully introduce this technology into fabricating pixelated light-emitting electrochemical cells (LECs). By carefully controlling the poly (3,4-ethylenedioxythiophene)-poly (styrenesulfonate), and cationic Ir(III) complexes ink formulation, as well as their inkjet printing properties, patterned LEC pixels in ultrahigh definition TV format was fabricated, leading to a resolution of 73 pixels per inch. The as-resulted inkjet-printed LEC exhibits a maximum luminance and a current efficiency of 3402 cd/m2, and 7.5 cd/A, respectively, which is close to that of the spin-coated one. This work paves a new way for the fabrication of low-cost material-efficient, pixelated light-emitting electrochemical cells. © 2019 Elsevier B.V.

Keyword:

Cationic Ir(III) complexes; Inkjet printing; Light-emitting electrochemical cells

Community:

  • [ 1 ] [Chen, Z.]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, 350116, China
  • [ 2 ] [Chen, Z.]Research Center for Microelectronics Technology, Fujian University of Technology, Fuzhou, 350118, China
  • [ 3 ] [Li, F.]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, 350116, China
  • [ 4 ] [Zeng, Q.]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, 350116, China
  • [ 5 ] [Yang, K.]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, 350116, China
  • [ 6 ] [Liu, Y.]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, 350116, China
  • [ 7 ] [Su, Z.]Institute of Functional Material Chemistry, Faculty of Chemistry, Northeast Normal University, Changchun, Jilin 130024, China
  • [ 8 ] [Shan, G.]Institute of Functional Material Chemistry, Faculty of Chemistry, Northeast Normal University, Changchun, Jilin 130024, China

Reprint 's Address:

  • [Li, F.]Institute of Optoelectronic Technology, Fuzhou UniversityChina

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Source :

Organic Electronics

ISSN: 1566-1199

Year: 2019

Volume: 69

Page: 336-342

3 . 3 1

JCR@2019

2 . 7 0 0

JCR@2023

ESI HC Threshold:138

JCR Journal Grade:2

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 12

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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