CZTS　thin　films　are　fabricated　using　sol-gel　method　following　sulfurization.　The　material　properties　of　the　CZTS　films　which　are　prepared　under　different　preheating　temperatures　and　times　are　systematically　investigated.　The　TGA-DTA　analysis　shows　that　the　sulfides　begin　to　be　oxidized　and　the　CZTS　nanoparticles　would　be　formed　when　the　preheating　temperature　is　above　300　°C.　Moreover,　with　increasing　the　preheating　temperature　and　time,　the　crystallinity　of　the　CZTS　thin　films　becomes　stronger　firstly　and　then　weaker.　Morphological　characterizations　show　that　the　CZTS　thin　films　deliver　the　best　crystallinity　under　the　preheating　temperature　of　250　°C　for　5　min.　The　E　g　,　resistivity,　carrier　concentration,　and　mobility　of　the　CZTS　thin　films　is　1.45　eV,　3.56　Ω·cm,　2.47　×　10　17　cm　−3　,　7.12　cm　2　·V　−1　·s　−1　,　respectively.　The　solar　cells　with　the　efficiency　of　1.51%　is　successfully　configured.　©　2019