Recent Advances in Compute-in-Memory Support for SRAM Using Monolithic 3-D Integration - Details

author：

Zhang, Z. (Zhang, Z..) ^[1] | Si, X. (Si, X..) ^[2] | Srinivasa, S. (Srinivasa, S..) ^[3] | Ramanathan, A.K. (Ramanathan, A.K..) ^[4] | Chang, M.-F. (Chang, M.-F..) ^[5]

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Abstract：

Computing-in-memory　(CiM)　is　a　popular　design　alternative　to　overcome　the　von　Neumann　bottleneck　and　improve　the　performance　of　artificial　intelligence　computing　applications.　Monolithic　three-dimensional　(M3D)　technology　is　a　promising　solution　to　extend　Moore＇s　law　through　the　development　of　CiM　for　data-intensive　applications.　In　this　article,　we　first　discuss　the　motivation　and　challenges　associated　with　two-dimensional　CiM　designs,　and　then　examine　the　possibilities　presented　by　emerging　M3D　technologies.　Finally,　we　review　recent　advances　and　trends　in　the　implementation　of　CiM　using　M3D　technology.　©　1981-2012　IEEE.

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[ 1 ] [Zhang, Z.]National Tsing Hua University, Fuzhou University, China
[ 2 ] [Si, X.]National Tsing Hua University, Taiwan
[ 3 ] [Srinivasa, S.]Pennsylvania State University, United States
[ 4 ] [Ramanathan, A.K.]Pennsylvania State University, United States
[ 5 ] [Chang, M.-F.]National Tsing Hua University, Taiwan

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IEEE Micro

ISSN： 0272-1732

Year： 2019

Issue： 6

Volume： 39

Page： 28-37

3 . 1 7 2

JCR@2019

2 . 8 0 0

JCR@2023

ESI HC Threshold：162

JCR Journal Grade：1

CAS Journal Grade：3

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SCOPUS Cited Count： 5

ESI Highly Cited Papers on the List： 0 Unfold All

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30 Days PV： 1

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