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author:

Li, E. (Li, E..) [1] | Lin, W. (Lin, W..) [2] | Yan, Y. (Yan, Y..) [3] | Yang, H. (Yang, H..) [4] | Wang, X. (Wang, X..) [5] | Chen, Q. (Chen, Q..) [6] | Lv, D. (Lv, D..) [7] | Chen, G. (Chen, G..) [8] | Chen, H. (Chen, H..) [9] | Guo, T. (Guo, T..) [10]

Indexed by:

Scopus

Abstract:

Neuromorphic computation, which emulates the signal process of the human brain, is considered to be a feasible way for future computation. Realization of dynamic modulation of synaptic plasticity and accelerated learning, which could improve the processing capacity and learning ability of artificial synaptic devices, is considered to further improve energy efficiency of neuromorphic computation. Nevertheless, realization of dynamic regulation of synaptic weight without an external regular terminal and the method that could endow artificial synaptic devices with the ability to modulate learning speed have rarely been reported. Furthermore, finding suitable materials to fully mimic the response of photoelectric stimulation is still challenging for photoelectric synapses. Here, a floating gate synaptic transistor based on an L-type ligand-modified all-inorganic CsPbBr3 perovskite quantum dots is demonstrated. This work provides first clear experimental evidence that the synaptic plasticity can be dynamically regulated by changing the waveforms of action potential and the environment temperature and both of these parameters originate from and are crucial in higher organisms. Moreover, benefiting from the excellent photoelectric properties and stability of quantum dots, a temperature-facilitated learning process is illustrated by the classical conditioning experiment with and without illumination, and the mechanism of synaptic plasticity is also demonstrated. This work offers a feasible way to realize dynamic modulation of synaptic weight and accelerating the learning process of artificial synapses, which showed great potential in the reduction of energy consumption and improvement of efficiency of future neuromorphic computing. © 2019 American Chemical Society.

Keyword:

accelerated learning; floating gate transistor memory; organic transistor; synaptic plasticity modulation; transistor synapse

Community:

  • [ 1 ] [Li, E.]Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
  • [ 2 ] [Lin, W.]Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
  • [ 3 ] [Yan, Y.]Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
  • [ 4 ] [Yang, H.]Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
  • [ 5 ] [Wang, X.]Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
  • [ 6 ] [Chen, Q.]Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
  • [ 7 ] [Lv, D.]Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
  • [ 8 ] [Chen, G.]Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
  • [ 9 ] [Chen, H.]Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
  • [ 10 ] [Guo, T.]Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China

Reprint 's Address:

  • [Chen, H.]Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou UniversityChina

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Source :

ACS Applied Materials and Interfaces

ISSN: 1944-8244

Year: 2019

Issue: 49

Volume: 11

Page: 46008-46016

8 . 7 5 8

JCR@2019

8 . 5 0 0

JCR@2023

ESI HC Threshold:236

JCR Journal Grade:1

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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