In　this　paper,　some　new　types　of　p-Si(100)　photocathodes　with　n-K　3Sb,　n-Na3Sb,　and　p-Cs3Sb　intermediate　layers　are　fabricated.　They　are　the　(Si-K3Sb-Cs)-O-Cs　and　(Si-Na　3Sb-Cs)-O-Cs　negative　electron　affinity　heterojunction　photocathodes,　and　the　(Si-Cs3Sb-Cs)-O-Cs　positive　electron　affinity　photocathode.　For　cathodes　with　n-K3Sb,　n-Na3Sb,　and　p-Cs3Sb　intermediate　layers,　the　maximum　photoemission　sensitivities　attainable　are,　respectively,　1050,　950,　and　150　μA/lm,　and　the　measured　minimum　work　functions　of　these　cathodes　are,　respectively,　0.9,　1.0,　and　0.85　eV.　The　photoemission　stability　of　the　Si　photocathode　with　an　alkali　antimonide　intermediate　layer　is　better　than　that　of　the　conventional　Si-O-Cs　and　GaAs-O-Cs　cathodes.　The　stability　of　the　cathode　is　also　related　to　the　states　of　the　cesium　and　oxygen　during　the　activation　process　and　the　light　illumination　condition.