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This paper intends to study the nonlinearity of LTE RF power amplifier and compensate for nonlinearity and memory effect of the amplifier, and compare the digital pre-distortion lookup table-based Digital pre-distortion and memory polynomial pre-compensation effect of the device. It can draw a conclusion that Digital Pre-Distortion can improve ACLR well, the memory effect of the amplifier in the single-carrier FDD-LTE signals can also be compensated at a certain degree. © 2013 Springer-Verlag.
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ISSN： 1876-1100
Year： 2013
Issue： VOL. 3
Volume： 178 LNEE
Page： 151-154
Language： English
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WoS CC Cited Count： 0
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ESI Highly Cited Papers on the List： 0 Unfold All
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