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Abstract：
Novel reflection mode and transmission mode GaAs (grown by metal organic chemical vapour deposition) photocathodes with the structures (GaAs-Na3Sb-Cs)-O-Cs, (GaAs-K3Sb-Cs)-O-Cs, (GaAs-Cs3Sb-Cs)-O-Cs and (GaAs-Na2KSb-Cs)-O-Cs were fabricated. For reflection mode (GaAs-Na3Sb-Cs)-O-Cs, (GaAs-K3Sb-Cs)-O-Cs, (GaAs-Cs3Sb-Cs)-O-Cs, (GaAs-Na2KSb-Cs)-O-Cs, and transmission mode (GaAs-Na2KSb-Cs)-O-Cs compound photocathodes, the measured maximum photosensitivities were respectively 100, 200, 60, 450, and 600 μA lm-1, the measured minimum work functions were respectively 1.35, 1.4, 1.25, 1.05 and 1.3 eV, the decay rates of photosensitivity were respectively about 12, 10, 15, 9 and 8 times slower than that of conventional GaAs photocathodes. In this paper, surface atomic models and energy band diagrams of the new compound GaAs photocathodes are analysed briefly.
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Thin Solid Films
ISSN： 0040-6090
Year： 1996
Issue： 1-2
Volume： 281-282
Page： 379-382
2 . 0 0 0
JCR@2023
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SCOPUS Cited Count： 6
ESI Highly Cited Papers on the List： 0 Unfold All
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30 Days PV： 0
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