The　back-gate　field　emission　display　(FED)　panel　was　fabricated　with　the　well-defined　SnO2　nano-wire,　over　10　μm　long,　150　nm　in　diameter,　grown　by　chemical　vapor　deposition　(CVD).　The　microstructures　of　the　SnO2　nanowires　were　characterized　with　X-ray　diffraction,　and　scanning　electron　microscopy.　The　back-gate　FED　device　was　then　constructed　with　the　SnO2　nanowires　arrays,　transferred　from　the　crucible　to　the　cathode　via　screen　printing.　The　field　emission　characteristics　of　the　prototyped　device　were　evaluated.　The　preliminary　results　show　that　the　gate　is　capable　of　regulating　the　emission　characteristics.　Besides,　at　an　anode　of　1600　V　and　a　gate　voltage　of　200　V,　full　screen　emission　was　clearly　observed　with　an　averaged　luminance　of　560　cd/m2.