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author:

Liao, Jie (Liao, Jie.) [1] | Cheng, Shuying (Cheng, Shuying.) [2] | Zhou, Haifang (Zhou, Haifang.) [3] | Long, Bo (Long, Bo.) [4]

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EI

Abstract:

In this reported study, Al-doped ZnS (ZnS:Al) thin films were fabricated by chemical bath deposition in alkaline condition along with a stable complexing agent of sodium citrate in ammonia/ammonium chloride buffer solution. Al concentrations were varied from 0 to 10 at.%. The structure and composition of the films were confirmed by X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectra and Raman spectroscopy. The XRD, FTIR and Raman spectra confirmed the existence of ZnS and Al-S bond, which had some effects on the properties of the films. The optical characteristics indicated the changes of the bandgap with the Al-doping concentrations. The resistivity of the ZnS:Al films with different Al-doping concentrations after annealing was analysed and the sample with 6 at.% Al concentration had the lowest resistivity of 9.9 × 10 4 Ω cm. © The Institution of Engineering and Technology 2013.

Keyword:

Alkalinity Aluminum Aluminum compounds Ammonia Buffer layers Chlorine compounds Deposition Fourier transform infrared spectroscopy II-VI semiconductors Semiconductor doping Sodium compounds Solar cells Thin films X ray diffraction Zinc sulfide

Community:

  • [ 1 ] [Liao, Jie]State Key Laboratory Breeding Base of Photocatalysis, College of Chemistry and Chemical Engineering, Fuzhou University, Fuzhou 350108, China
  • [ 2 ] [Liao, Jie]Institute of Micro-Nano Devices and Solar Cells, College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
  • [ 3 ] [Cheng, Shuying]State Key Laboratory Breeding Base of Photocatalysis, College of Chemistry and Chemical Engineering, Fuzhou University, Fuzhou 350108, China
  • [ 4 ] [Cheng, Shuying]Institute of Micro-Nano Devices and Solar Cells, College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
  • [ 5 ] [Zhou, Haifang]Institute of Micro-Nano Devices and Solar Cells, College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
  • [ 6 ] [Long, Bo]Institute of Micro-Nano Devices and Solar Cells, College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China

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Source :

Micro and Nano Letters

Year: 2013

Issue: 4

Volume: 8

Page: 211-214

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 20

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

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