Band alignment at the In2S3/Cu2ZnSnS 4 heterojunction interface investigated by X-ray photoemission spectroscopy - Details

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Abstract：

The　band　alignment　at　the　In2S3/Cu　2ZnSnS4　heterojunction　interface　is　investigated　by　X-ray　photoemission　spectroscopy.　In2S3　is　thermally　evaporated　onto　the　contamination-free　polycrystalline　Cu2ZnSnS4　surface　prepared　by　magnetron　sputtering.　The　valence　band　offset　is　measured　to　be　0.46　±　0.1　eV,　which　matches　well　with　the　valance　band　offset　value　0.49　eV　calculated　using　＇transitivity＇　method.　The　conduction　band　offset　is　determined　to　be　0.82　±　0.1　eV,　indicating　a　＇type　I＇　band　alignment　at　the　heterojunction　interface.　©　2014　Springer-Verlag　Berlin　Heidelberg.

Keyword：

Alignment Copper compounds Heterojunctions Indium sulfide Photoelectron spectroscopy Sulfur compounds Tin compounds X rays Zinc compounds

Community：

[ 1 ] [Lin, Lingyan]Institute of Micro/Nano Devices and Solar Cells, College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
[ 2 ] [Yu, Jinling]Institute of Micro/Nano Devices and Solar Cells, College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
[ 3 ] [Cheng, Shuying]Institute of Micro/Nano Devices and Solar Cells, College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
[ 4 ] [Lu, Peimin]Institute of Micro/Nano Devices and Solar Cells, College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
[ 5 ] [Lai, Yunfeng]Institute of Micro/Nano Devices and Solar Cells, College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
[ 6 ] [Lin, Sile]Institute of Micro/Nano Devices and Solar Cells, College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
[ 7 ] [Zhao, Pengyi]Institute of Micro/Nano Devices and Solar Cells, College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China

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jlyu@semi.ac.cn

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Related Keywords：

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Source ：

Applied Physics A: Materials Science and Processing

ISSN： 0947-8396

Year： 2014

Issue： 4

Volume： 116

Page： 2173-2177

1 . 7 0 4

JCR@2014

2 . 5 0 0

JCR@2023

ESI HC Threshold：213

JCR Journal Grade：2

CAS Journal Grade：3

Cited Count：

WoS CC Cited Count：

SCOPUS Cited Count： 10

ESI Highly Cited Papers on the List： 0 Unfold All

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Chinese Cited Count：

30 Days PV： 0

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