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author:

Abliz, Ablat (Abliz, Ablat.) [1] | Huang, Chun-Wei (Huang, Chun-Wei.) [2] | Wang, Jingli (Wang, Jingli.) [3] | Xu, Lei (Xu, Lei.) [4] | Liao, Lei (Liao, Lei.) [5] | Xiao, Xiangheng (Xiao, Xiangheng.) [6] | Wu, Wen-Wei (Wu, Wen-Wei.) [7] | Fan, Zhiyong (Fan, Zhiyong.) [8] | Jiang, Changzhong (Jiang, Changzhong.) [9] | Li, Jinchai (Li, Jinchai.) [10] | Guo, Shishang (Guo, Shishang.) [11] | Liu, Chuansheng (Liu, Chuansheng.) [12] | Guo, Tailiang (Guo, Tailiang.) [13]

Indexed by:

EI

Abstract:

The intriguing properties of zinc oxide-based semiconductors are being extensively studied as they are attractive alternatives to current silicon-based semiconductors for applications in transparent and flexible electronics. Although they have promising properties, significant improvements on performance and electrical reliability of ZnO-based thin film transistors (TFTs) should be achieved before they can be applied widely in practical applications. This work demonstrates a rational and elegant design of TFT, composed of poly crystalline ZnO:H/ZnO bilayer structure without using other metal elements for doping. The field-effect mobility and gate bias stability of the bilayer structured devices have been improved. In this device structure, the hydrogenated ultrathin ZnO:H active layer (∼3 nm) could provide suitable carrier concentration and decrease the interface trap density, while thick pure-ZnO layer could control channel conductance. Based on this novel structure, a high field-effect mobility of 42.6 cm2 V-1 s-1, a high on/off current ratio of 108 and a small subthreshold swing of 0.13 V dec-1 have been achieved. Additionally, the bias stress stability of the bilayer structured devices is enhanced compared to the simple single channel layer ZnO device. These results suggest that the bilayer ZnO:H/ZnO TFTs have a great potential for low-cost thin-film electronics. (Graph Presented). © 2016 American Chemical Society.

Keyword:

Carrier concentration Carrier mobility Flexible electronics Hydrogenation II-VI semiconductors Semiconductor doping Thin film circuits Thin films Thin film transistors Wide band gap semiconductors Zinc oxide

Community:

  • [ 1 ] [Abliz, Ablat]Department of Physics, Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan; 430072, China
  • [ 2 ] [Huang, Chun-Wei]Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu; 30010, Taiwan
  • [ 3 ] [Wang, Jingli]Department of Physics, Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan; 430072, China
  • [ 4 ] [Xu, Lei]Department of Physics, Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan; 430072, China
  • [ 5 ] [Liao, Lei]Department of Physics, Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan; 430072, China
  • [ 6 ] [Xiao, Xiangheng]Department of Physics, Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan; 430072, China
  • [ 7 ] [Wu, Wen-Wei]Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu; 30010, Taiwan
  • [ 8 ] [Fan, Zhiyong]Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
  • [ 9 ] [Jiang, Changzhong]Department of Physics, Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan; 430072, China
  • [ 10 ] [Li, Jinchai]Department of Physics, Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan; 430072, China
  • [ 11 ] [Guo, Shishang]Department of Physics, Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan; 430072, China
  • [ 12 ] [Liu, Chuansheng]Department of Physics, Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan; 430072, China
  • [ 13 ] [Guo, Tailiang]Institute of Optoelectronic Display, Fuzhou University, Fuzhou; 350002, China

Reprint 's Address:

  • [liao, lei]department of physics, key laboratory of artificial micro- and nano-structures of ministry of education, wuhan university, wuhan; 430072, china

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Source :

ACS Applied Materials and Interfaces

ISSN: 1944-8244

Year: 2016

Issue: 12

Volume: 8

Page: 7862-7868

7 . 5 0 4

JCR@2016

8 . 5 0 0

JCR@2023

ESI HC Threshold:324

JCR Journal Grade:1

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count: 83

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

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