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author:

Lin, Yanzhang (Lin, Yanzhang.) [1] | Yao, Haizi (Yao, Haizi.) [2] | Ren, Zhiying (Ren, Zhiying.) [3] | Chen, Ying (Chen, Ying.) [4] | Wang, Xiangfeng (Wang, Xiangfeng.) [5]

Indexed by:

EI

Abstract:

We utilized a coherent terahertz time-domain spectroscopy system to measure the dynamic conductivity of an InAs two-dimensional electron gas. Based on the theoretical transmission analysis, the real and imaginary parts of the complex conductivity of the sample were extracted from the transmitted terahertz time-domain waveforms. We also measured the sample at low temperatures and fitted the real and imaginary parts of the conductivity with the Drude model to extract its densities and mobilities. The dominant scattering mechanisms are discussed according to the temperature dependence of the extracted densities and mobilities. © 2017 Elsevier B.V.

Keyword:

Arsenic compounds Extraction III-V semiconductors Indium arsenide Plasmons Reflectometers Spectrophotometers Temperature distribution Terahertz spectroscopy Time domain analysis Two dimensional electron gas

Community:

  • [ 1 ] [Lin, Yanzhang]School of Mechanical Engineering and Automation, Fuzhou University, Fuzhou; 350108, China
  • [ 2 ] [Yao, Haizi]School of Mechanical Engineering and Automation, Fuzhou University, Fuzhou; 350108, China
  • [ 3 ] [Ren, Zhiying]School of Mechanical Engineering and Automation, Fuzhou University, Fuzhou; 350108, China
  • [ 4 ] [Chen, Ying]School of Mechanical Engineering and Automation, Fuzhou University, Fuzhou; 350108, China
  • [ 5 ] [Wang, Xiangfeng]School of Mechanical Engineering and Automation, Fuzhou University, Fuzhou; 350108, China
  • [ 6 ] [Wang, Xiangfeng]Department of Electrical and Computer Engineering, Rice University, Houston; TX; 77005, United States

Reprint 's Address:

  • [wang, xiangfeng]department of electrical and computer engineering, rice university, houston; tx; 77005, united states;;[wang, xiangfeng]school of mechanical engineering and automation, fuzhou university, fuzhou; 350108, china

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Source :

Optical Materials

ISSN: 0925-3467

Year: 2017

Volume: 69

Page: 148-151

2 . 3 2

JCR@2017

3 . 8 0 0

JCR@2023

ESI HC Threshold:306

JCR Journal Grade:2

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 2

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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