Thermal stability and data retention of resistive random access memory with HfOx/ZnO double layers - Details

author：

Indexed by：

EI CSCD

Abstract：

As　an　industry　accepted　storage　scheme,　hafnium　oxide　(HfOx)　based　resistive　random　access　memory　(RRAM)　should　further　improve　its　thermal　stability　and　data　retention　for　practical　applications.　We　therefore　fabricated　RRAMs　with　HfOx/ZnO　double-layer　as　the　storage　medium　to　study　their　thermal　stability　as　well　as　data　retention.　The　HfOx/ZnO　double-layer　is　capable　of　reversible　bipolar　switching　under　ultralow　switching　current　(　©　2017　Chinese　Physical　Society　and　IOP　Publishing　Ltd.

Keyword：

Hafnium oxides RRAM Schottky barrier diodes Stability Switching Thermodynamic stability Zinc compounds

Community：

[ 1 ] [Lai, Yun-Feng]School of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
[ 2 ] [Chen, Fan]School of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
[ 3 ] [Zeng, Ze-Cun]School of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
[ 4 ] [Lin, Peijie]School of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
[ 5 ] [Cheng, Shu-Ying]School of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
[ 6 ] [Yu, Jin-Ling]School of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China

Reprint 's Address：

[lai, yun-feng]school of physics and information engineering, fuzhou university, fuzhou; 350108, china

Email：

yunfeng.lai@fzu.edu.cn

Show more details

Related Keywords：

Capacitance properties of IrO2-HfO2 coated titanium electrodes with different content of Hf in the coatings
2013，Transactions of Materials and Heat Treatment
First investigation of the morphological and luminescence properties of HfO2 nanoparticles synthesized by photochemical synthesis
2023，CrystEngComm
On the Origin of the Light Yield Enhancement in Polymeric Composite Scintillators Loaded with Dense Nanoparticles
2024，Nano Letters
MIM Capacitors Featuring Low EOT and Low Leakage Current Density by Nitrogen-Incorporated HfO/ZrO/HfO
2024，IEEE Transactions on Electron Devices
Thermal stability and data retention of resistive random access memory with HfOx/ZnO double layers
2017，CHINESE PHYSICS B

Source ：

Chinese Physics B

ISSN： 1674-1056

Year： 2017

Issue： 8

Volume： 26

1 . 3 2 1

JCR@2017

1 . 5 0 0

JCR@2023

ESI HC Threshold：170

JCR Journal Grade：3

CAS Journal Grade：4

Cited Count：

WoS CC Cited Count：

SCOPUS Cited Count： 8

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 4

Affiliated Colleges：

Get Fulltext

DOI Library Discovery Baidu Scholar Search Engineering Village

Type
Departments

All Years Choose Year From to