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author:

Zhang, Guocheng (Zhang, Guocheng.) [1] | Zhang, Pingjun (Zhang, Pingjun.) [2] | Hu, Daobing (Hu, Daobing.) [3] | Chen, Huipeng (Chen, Huipeng.) [4] | Guo, Tailiang (Guo, Tailiang.) [5]

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EI

Abstract:

Efficient charge carrier transport in organic thin film transistors (OTFTs) often requires thin films with highly oriented feature. Although there are a number of methods to effectively form high-degree and large-scale alignment during the process of film formation, these methods usually resulted in nonuniform films. In order to obtain highly aligned uniform films, this paper provides a postalignment method after film formation. By applying electric field during solvent annealing, the polymer backbone can be reorganized along the direction of the electric field, leading to highly aligned polymer chains and significant improvement in charge mobility. In addition, after doping the polymer films with liquid crystal (LC), with the benefit of LC molecules' template, the degree of orientation of polymer molecular chains was further enhanced, resulting in further improvement of the charge mobility up to 9.42 cm2V-1 s-1. This paper exhibits the possibility of improving charge transport after film formation to obtain high-performance solution-processable OTFT for low-cost and large-scale organic electronics. © 1963-2012 IEEE.

Keyword:

Alignment Carrier transport Crystal orientation Electric field effects Electric fields Liquid crystals Molecular orientation Organic field effect transistors Polymer films Semiconductor doping Thin film circuits Thin films Thin film transistors

Community:

  • [ 1 ] [Zhang, Guocheng]Institute of Optoelectronic Display, National and Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou University, Fuzhou; 350002, China
  • [ 2 ] [Zhang, Guocheng]College of Information Science and Engineering, Fujian University of Technology, Fuzhou; 350108, China
  • [ 3 ] [Zhang, Pingjun]College of Information Science and Engineering, Fujian University of Technology, Fuzhou; 350108, China
  • [ 4 ] [Hu, Daobing]Institute of Optoelectronic Display, National and Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou University, Fuzhou; 350002, China
  • [ 5 ] [Chen, Huipeng]Institute of Optoelectronic Display, National and Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou University, Fuzhou; 350002, China
  • [ 6 ] [Guo, Tailiang]Institute of Optoelectronic Display, National and Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou University, Fuzhou; 350002, China

Reprint 's Address:

  • [chen, huipeng]institute of optoelectronic display, national and local united engineering laboratory of flat panel display technology, fuzhou university, fuzhou; 350002, china

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Source :

IEEE Transactions on Electron Devices

ISSN: 0018-9383

Year: 2018

Issue: 3

Volume: 65

Page: 1101-1106

2 . 7 0 4

JCR@2018

2 . 9 0 0

JCR@2023

ESI HC Threshold:170

JCR Journal Grade:2

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 11

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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