The　first-principle　method　based　on　the　density　functional　theory(DFT)　was　performed　to　investigate　the　crystal　structural　characteristics　of　highly　Si-doped　(Ru1-xSix)O2(x=0,0.125,0.25,0.375　and　0.5).　The　phase　analysis　of　Si-doped　RuO2　evidently　proves　that　the　high　concentrated　Si　solid　solutions　are　achieved　by　thermal　decomposition　with　proper　annealing　process.　The　band　structures　show　that　the　highly　Si-doped　RuO2　always　maintains　metallic　nature.　The　density　of　states　suggests　that　the　electrical　conductive-hosts　originate　from　Ru-4d　and　O-2p　electrons,　along　with　small　amount　Si-3p　electrons.　The　descending　of　electrical　conductivity　of　Si-doped　(Ru1-xSix)O2　abides　by　the　single　exponential　attenuation　trend　with　increasing　Si　doping.　©　All　Right　Reserved.