In　this　work,　the　electron　transport　limitations　caused　by　oxide　defects　was　overcome　by　replacing　single　layer　semiconductor　channel　with　a　ZnO/IGZO　heterojunction　prepared　by　inkjet　printing.　It　was　found　that　ZnO/IGZO　transistor　exhibited　banded　electron　transport,　and　the　mobility　was　increased　by　about　9　times　and　19　times,　respectively,　to　6.42　cm2/(V•s)　compared　with　single　layer　IGZO　or　ZnO　TFT.　The　switch　ratio　was　increased　by　2　and　4　orders　of　magnitude　respectively,　which　can　reach　1.8×108.　Significant　improvement　in　performance　was　associated　with　the　two-dimensional　electron　gas　formed　between　the　IGZO　and　ZnO　heterointerfaces　due　to　the　large　offset　of　the　conduction　band.　©　2019,　Science　Press.　All　right　reserved.