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author:

Lan, Ruijun (Lan, Ruijun.) [1] | Zhao, Bin (Zhao, Bin.) [2] | Mu, Penghua (Mu, Penghua.) [3] | Shen, Yingjie (Shen, Yingjie.) [4] | Ren, Cheng (Ren, Cheng.) [5] | Cao, Dezhong (Cao, Dezhong.) [6]

Indexed by:

EI

Abstract:

A passively-Q-switched Yb:Lu1-x-yYxLayVO4 laser based on a two-dimension (2D) molybdenum ditelluride (MoTe2) saturable absorber (SA) is reported for the first time to the best of our knowledge. High quality few layered 2D MoTe2 nanosheets were fabricated by liquid phase exfoliation (LPE) method and used as the SA, whose saturable absorption properties around 1.0 μm were characterized with a saturation fluence of 3.02 μJ/cm2 and a modulation depth of 8.3%. In the passively Q-switched laser operation, the shortest pulse width of 500 ns was obtained with an average output power of 0.33 W at a pulse repetition rate of 117 kHz, corresponding to the maximum single pulse energy of 2.8 μJ and the peak power of 5.6 W. © 2013 IEEE.

Keyword:

Lanthanum compounds Lutetium compounds Molybdenum compounds Nonlinear optics Pulse repetition rate Q switched lasers Q switching Saturable absorbers Semiconductor quantum wells Solid state lasers Vanadium compounds Ytterbium compounds Yttrium compounds

Community:

  • [ 1 ] [Lan, Ruijun]School of Opto-Electronic Information Science and Technology, Yantai University, Yantai, China
  • [ 2 ] [Zhao, Bin]College of Chemistry, Fuzhou University, Fuzhou, China
  • [ 3 ] [Mu, Penghua]School of Opto-Electronic Information Science and Technology, Yantai University, Yantai, China
  • [ 4 ] [Shen, Yingjie]School of Opto-Electronic Information Science and Technology, Yantai University, Yantai, China
  • [ 5 ] [Ren, Cheng]School of Opto-Electronic Information Science and Technology, Yantai University, Yantai, China
  • [ 6 ] [Cao, Dezhong]School of Opto-Electronic Information Science and Technology, Yantai University, Yantai, China

Reprint 's Address:

  • [lan, ruijun]school of opto-electronic information science and technology, yantai university, yantai, china

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Source :

IEEE Access

Year: 2019

Volume: 7

Page: 153378-153381

3 . 7 4 5

JCR@2019

3 . 4 0 0

JCR@2023

ESI HC Threshold:150

JCR Journal Grade:1

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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