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author:

Zhang, Zhixiao (Zhang, Zhixiao.) [1] | Si, Xin (Si, Xin.) [2] | Srinivasa, Srivatsa (Srinivasa, Srivatsa.) [3] | Ramanathan, Akshay Krishna (Ramanathan, Akshay Krishna.) [4] | Chang, Meng-Fan (Chang, Meng-Fan.) [5]

Indexed by:

EI

Abstract:

Computing-in-memory (CiM) is a popular design alternative to overcome the von Neumann bottleneck and improve the performance of artificial intelligence computing applications. Monolithic three-dimensional (M3D) technology is a promising solution to extend Moore's law through the development of CiM for data-intensive applications. In this article, we first discuss the motivation and challenges associated with two-dimensional CiM designs, and then examine the possibilities presented by emerging M3D technologies. Finally, we review recent advances and trends in the implementation of CiM using M3D technology. © 1981-2012 IEEE.

Keyword:

Monolithic integrated circuits Static random access storage Three dimensional integrated circuits

Community:

  • [ 1 ] [Zhang, Zhixiao]National Tsing Hua University, Fuzhou University, China
  • [ 2 ] [Si, Xin]National Tsing Hua University, Taiwan
  • [ 3 ] [Srinivasa, Srivatsa]Pennsylvania State University, United States
  • [ 4 ] [Ramanathan, Akshay Krishna]Pennsylvania State University, United States
  • [ 5 ] [Chang, Meng-Fan]National Tsing Hua University, Taiwan

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Source :

IEEE Micro

ISSN: 0272-1732

Year: 2019

Issue: 6

Volume: 39

Page: 28-37

3 . 1 7 2

JCR@2019

2 . 8 0 0

JCR@2023

ESI HC Threshold:162

JCR Journal Grade:1

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 5

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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