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author:

Zheng, Y. D. (Zheng, Y. D..) [1] | Dai, P. Q. (Dai, P. Q..) [2] | Xu, W. C. (Xu, W. C..) [3] | Hu, S. R. (Hu, S. R..) [4]

Indexed by:

EI Scopus SCIE

Abstract:

The microstructures and tensile properties of electrodeposited nanocrystalline Ni (nc-Ni) with a broad grain size distribution after annealing at 150, 200 and 300 degrees C for 500 s were investigated. The as deposited broad grain size distribution nc-Ni sample exhibited a moderate strength sigma(UTS) of similar to 1107 MPa but a markedly enhanced ductility epsilon(TEF) of similar to 10%, compared with electrodeposited nc-Ni with a narrow grain size distribution. Annealing below 200 degrees C increased the strength but caused a considerably reduction in tensile elongation. This behaviour is attributed to the grain boundary relaxation and the increased order of grain boundaries after annealing, which can make the grain boundary activities, such as the grain boundary sliding and grain rotations, more difficult. Further annealing at 300 degrees C decreased both the yield strength and tensile elongation significantly due to significant grain growth.

Keyword:

Annealing Electrodeposition Grain growth Mechanical properties Nanocrystlline nickel

Community:

  • [ 1 ] [Zheng, Y. D.]Fuzhou Univ, Coll Mat Sci & Engn, Fuzhou 350108, Peoples R China
  • [ 2 ] [Dai, P. Q.]Fuzhou Univ, Coll Mat Sci & Engn, Fuzhou 350108, Peoples R China
  • [ 3 ] [Xu, W. C.]Fuzhou Univ, Coll Mat Sci & Engn, Fuzhou 350108, Peoples R China
  • [ 4 ] [Dai, P. Q.]Fujian Univ Technol, Dept Mat Sci & Engn, Fuzhou 350108, Peoples R China
  • [ 5 ] [Hu, S. R.]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100124, Peoples R China

Reprint 's Address:

  • 戴品强

    [Dai, P. Q.]Fuzhou Univ, Coll Mat Sci & Engn, Fuzhou 350108, Peoples R China

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Source :

MATERIALS SCIENCE AND TECHNOLOGY

ISSN: 0267-0836

Year: 2011

Issue: 12

Volume: 27

Page: 1793-1797

0 . 7 7 2

JCR@2011

1 . 7 0 0

JCR@2023

ESI Discipline: MATERIALS SCIENCE;

JCR Journal Grade:2

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count: 4

SCOPUS Cited Count: 6

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 3

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