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author:

Zhang Jinshui (Zhang Jinshui.) [1] (Scholars:张金水) | Wang Bo (Wang Bo.) [2] | Wang Xinchen (Wang Xinchen.) [3] (Scholars:王心晨)

Indexed by:

Scopus SCIE PKU CSCD

Abstract:

Semiconductor photocatalysis via sunlight-driven photoredox reactions to directly convert solar energy into chemical energy or to mineralize organic pollutants, is regarded as a long-term solution to address the global energy and environmental problems. Recently, graphitic carbon nitride (g-C3N4), a polymeric semiconductor has been widely used as a low-cost, stable and metal-free visible-light-active photocatalyst in the sustainable utilization of solar energy, such as water splitting, organic photosynthesis and environmental remediation. This has attracted worldwide attention from energy and environmental relative fields. In this review, some recent advances in g-C3N4, photocatalysis are present, including the theoretical research of chemical structure and features of g-C3N4, metal/non-mental doping of g-C3N4, to adjust the semiconductive electronic band structure, soft/hard templates assisted the synthesis of g-C3N4 nanoarchictures, surface modification of g-C3N4 to overcome the high kinetic barrier for water reduction/oxidation, and as well as the construction of g-C3N4, based heterojunctions and composite photocatalysts to promote the separation of energy-wasteful charge recombination. The prospects for the development of highly efficient g-C3N4 based photocatalysts are also discussed.

Keyword:

graphitic carbon nitride photocatalysis polymeric semiconductor solar energy

Community:

  • [ 1 ] [Zhang Jinshui]Fuzhou Univ, Res Inst Photocatalysis, Coll Chem & Chem Engn, Fuzhou 350002, Peoples R China
  • [ 2 ] [Wang Bo]Fuzhou Univ, Res Inst Photocatalysis, Coll Chem & Chem Engn, Fuzhou 350002, Peoples R China
  • [ 3 ] [Wang Xinchen]Fuzhou Univ, Res Inst Photocatalysis, Coll Chem & Chem Engn, Fuzhou 350002, Peoples R China

Reprint 's Address:

  • 王心晨

    [Wang Xinchen]Fuzhou Univ, Res Inst Photocatalysis, Coll Chem & Chem Engn, Fuzhou 350002, Peoples R China

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Source :

PROGRESS IN CHEMISTRY

ISSN: 1005-281X

CN: 11-3383/O6

Year: 2014

Issue: 1

Volume: 26

Page: 19-29

0 . 6 8 7

JCR@2014

1 . 0 0 0

JCR@2023

ESI Discipline: CHEMISTRY;

ESI HC Threshold:268

JCR Journal Grade:4

CAS Journal Grade:4

Cited Count:

WoS CC Cited Count: 38

SCOPUS Cited Count: 56

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 4

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