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author:

Wang, Sasa (Wang, Sasa.) [1] | Li, Lina (Li, Lina.) [2] | Sun, Zhihua (Sun, Zhihua.) [3] | Ji, Chengmin (Ji, Chengmin.) [4] | Liu, Sijie (Liu, Sijie.) [5] | Wu, Zhenyue (Wu, Zhenyue.) [6] | Zhao, Sangen (Zhao, Sangen.) [7] | Zeb, Aurang (Zeb, Aurang.) [8] | Hong, Maochun (Hong, Maochun.) [9] | Luo, Junhua (Luo, Junhua.) [10]

Indexed by:

EI Scopus SCIE

Abstract:

White-light emission has evoked great attention as one of the most promising technologies in the applications of solid-state lighting devices, light emitting diodes, and flat-panel displays. However, up to now, pure white-light emitting materials have rarely been reported. Here, we present a single-component white-light emitting semiconductor, [C5H9-NH3](4)CdBr6, which exhibits CIE chromaticity coordinates of (0.33, 0.33). Notably, this value is the same as that of the standard pure white-light emission. Remarkably, it shows an ultrahigh color rendering index of 92.5, which exceeds that of mixed-phosphor light sources and is comparable to the recently reported highest one among single-component materials. Mechanistic studies indicate that the white-light emission originates from the synergetic effect of deep defects coupled with the organic component. Such an organic-inorganic hybrid with outstanding color characteristics will pave a new approach in the development of white-light emitting materials with practical applications.

Keyword:

Community:

  • [ 1 ] [Wang, Sasa]Chinese Acad Sci, Fujian Inst Res Struct Matter, State Key Lab Struct Chem, Fuzhou 350002, Peoples R China
  • [ 2 ] [Li, Lina]Chinese Acad Sci, Fujian Inst Res Struct Matter, State Key Lab Struct Chem, Fuzhou 350002, Peoples R China
  • [ 3 ] [Sun, Zhihua]Chinese Acad Sci, Fujian Inst Res Struct Matter, State Key Lab Struct Chem, Fuzhou 350002, Peoples R China
  • [ 4 ] [Ji, Chengmin]Chinese Acad Sci, Fujian Inst Res Struct Matter, State Key Lab Struct Chem, Fuzhou 350002, Peoples R China
  • [ 5 ] [Liu, Sijie]Chinese Acad Sci, Fujian Inst Res Struct Matter, State Key Lab Struct Chem, Fuzhou 350002, Peoples R China
  • [ 6 ] [Wu, Zhenyue]Chinese Acad Sci, Fujian Inst Res Struct Matter, State Key Lab Struct Chem, Fuzhou 350002, Peoples R China
  • [ 7 ] [Zhao, Sangen]Chinese Acad Sci, Fujian Inst Res Struct Matter, State Key Lab Struct Chem, Fuzhou 350002, Peoples R China
  • [ 8 ] [Zeb, Aurang]Chinese Acad Sci, Fujian Inst Res Struct Matter, State Key Lab Struct Chem, Fuzhou 350002, Peoples R China
  • [ 9 ] [Hong, Maochun]Chinese Acad Sci, Fujian Inst Res Struct Matter, State Key Lab Struct Chem, Fuzhou 350002, Peoples R China
  • [ 10 ] [Luo, Junhua]Chinese Acad Sci, Fujian Inst Res Struct Matter, State Key Lab Struct Chem, Fuzhou 350002, Peoples R China
  • [ 11 ] [Wang, Sasa]Fuzhou Univ, Coll Chem, Fuzhou 350116, Peoples R China
  • [ 12 ] [Zeb, Aurang]Fuzhou Univ, Coll Chem, Fuzhou 350116, Peoples R China

Reprint 's Address:

  • [Li, Lina]Chinese Acad Sci, Fujian Inst Res Struct Matter, State Key Lab Struct Chem, Fuzhou 350002, Peoples R China;;[Luo, Junhua]Chinese Acad Sci, Fujian Inst Res Struct Matter, State Key Lab Struct Chem, Fuzhou 350002, Peoples R China

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Source :

JOURNAL OF MATERIALS CHEMISTRY C

ISSN: 2050-7526

Year: 2017

Issue: 19

Volume: 5

Page: 4731-4735

5 . 9 7 6

JCR@2017

5 . 7 0 0

JCR@2023

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:306

JCR Journal Grade:1

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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