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Two-dimensional (2D) layered materials are at the forefront of research because of their unique structures and promising catalytic abilities. Here, the structural stability, electronic properties and gas adsorption of metal (V, Nb, Ta)-doped monolayer MoS2 have been investigated by density functional theory calculations. Our results show that the metal (V, Nb, Ta)-doped monolayer MoS2 is a stable catalyst under room temperature, due to the strong interaction between the doped metals (V, Nb, Ta) and S vacancy of monolayer MoS2. Compared with the gas adsorption (CO, NO2, H2O, NH3) on pristine monolayer MoS2, doped metal (V, Nb, Ta) can significantly improve the adsorption properties, chemical activity and the sensitivity of that of adsorbed gas molecules. This effect occurs due to the strong overlap between the metal nd orbitals and gas molecule orbitals, result in activation of the adsorbed gas molecules. Analysis of Bader charge shows that, more charge transfer (-0.66 e to -0.72 e) occur from metal (V, Nb, Ta)-doped monolayer MoS2 to the oxidizing gas molecules (NO2) acting as acceptors. While for the adsorption of CO molecules, the relative less electrons (about -0.24 e - -0.35 e) transfer occuring from substrate to the adsorbed gases. Whereas the direction of charge transfers is reversed for the adsorption of the reducing gas (H2O and NH3) behaving as donors, in which small electrons (0.04 e -0.09 e) transfer from adsorbed gas to metal (V, Nb, Ta)-doped monolayer MoS2. Our results suggested that metal (V, Nb, Ta)-doped monolayer MoS2 might be a good candidate for low-cost, highly active, and stable catalysts and gas sensors, providing an avenue to facilitate the design of high active MoS2-based two dimensional catalysts and gas sensors. (C) 2017 Elsevier B.V. All rights reserved.
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APPLIED SURFACE SCIENCE
ISSN: 0169-4332
Year: 2017
Volume: 419
Page: 522-530
4 . 4 3 9
JCR@2017
6 . 3 0 0
JCR@2023
ESI Discipline: MATERIALS SCIENCE;
ESI HC Threshold:306
JCR Journal Grade:1
CAS Journal Grade:1
Cited Count:
WoS CC Cited Count: 101
SCOPUS Cited Count: 112
ESI Highly Cited Papers on the List: 0 Unfold All
WanFang Cited Count:
Chinese Cited Count:
30 Days PV: 4
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