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author:

Ren Xiao-Xia (Ren Xiao-Xia.) [1] | Shen Feng-Juan (Shen Feng-Juan.) [2] | Lin Xin-You (Lin Xin-You.) [3] (Scholars:林歆悠) | Zheng Rui-Lun (Zheng Rui-Lun.) [4]

Indexed by:

SCIE PKU CSCD

Abstract:

Considering the anharmonic vibrations and the interactions between electron and phonon of atoms, in this article we study the temperature dependence of Gruneisen parameter, thermal expansion coefficient at low temperature and phonon relaxation time by using the theory and method of solid state physics. The influences of the anharmonic vibration of the atom on the above parameters are further discussed. The obtained results are as follows. 1) The thermal expansion coefficient of graphene is a negative value when the temperature drops below room temperature. The absolute value of the thermal expansion coefficient of graphene increases monotonically with the increase of temperature. The thermal expansion coefficient of graphene is -3.64 x 10(-6) K-1 at room temperature. 2) The value of Gruneisen parameter is zero in the harmonic approximation. If the anharmonic vibration is considered, the Gruneisen parameter will increase slowly with the increase of temperature. Its value is between 1.40 and 1.42 and the change is almost linear. And we find that the influence of the second anharmonic term is less than that of the first anharmonic term on Gruneisen parameter. 3) The phonon relaxation time decreases with the increase of temperature. The rate changes rapidly at low temperature (T < 10 K), then it changes very slowly. The phonon relaxation time is almost inversely proportional to temperature when the temperature is higher than 300 K.

Keyword:

graphene Gruneisen parameter relaxation time thermal expansion coefficient at low temperature

Community:

  • [ 1 ] [Ren Xiao-Xia]Chongqing Univ Arts & Sci, Coll Elect & Elect Engn, Elect Engn Res Ctr New Energy Storage Devices & A, Chongqing 402160, Peoples R China
  • [ 2 ] [Shen Feng-Juan]Chongqing Univ Arts & Sci, Coll Elect & Elect Engn, Elect Engn Res Ctr New Energy Storage Devices & A, Chongqing 402160, Peoples R China
  • [ 3 ] [Zheng Rui-Lun]Chongqing Univ Arts & Sci, Coll Elect & Elect Engn, Elect Engn Res Ctr New Energy Storage Devices & A, Chongqing 402160, Peoples R China
  • [ 4 ] [Lin Xin-You]Fuzhou Univ, Sch Mech Engn & Automat, Fuzhou 350000, Fujian, Peoples R China

Reprint 's Address:

  • [Zheng Rui-Lun]Chongqing Univ Arts & Sci, Coll Elect & Elect Engn, Elect Engn Res Ctr New Energy Storage Devices & A, Chongqing 402160, Peoples R China

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Source :

ACTA PHYSICA SINICA

ISSN: 1000-3290

CN: 11-1958/O4

Year: 2017

Issue: 22

Volume: 66

0 . 6 6 9

JCR@2017

0 . 8 0 0

JCR@2023

ESI HC Threshold:170

JCR Journal Grade:4

CAS Journal Grade:4

Cited Count:

WoS CC Cited Count: 5

SCOPUS Cited Count: 6

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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