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author:

Chen, Jianhui (Chen, Jianhui.) [1] | He, Xiaojun (He, Xiaojun.) [2] | Sa, Baisheng (Sa, Baisheng.) [3] (Scholars:萨百晟) | Zhou, Jian (Zhou, Jian.) [4] | Xu, Chao (Xu, Chao.) [5] | Wen, Cuilian (Wen, Cuilian.) [6] (Scholars:温翠莲) | Sun, Zhimei (Sun, Zhimei.) [7]

Indexed by:

EI Scopus SCIE

Abstract:

van der Waals (vdW) heterostructures, achieved by binding various two-dimensional (2D) materials together via vdW interaction, expand the family of 2D materials and show fascinating possibilities. In this work, we have systematically investigated the geometrical structures, electronic structures, and optical properties of III-VI (MX, M = Ga, In and X = S, Se, Te) vdW heterostructures and their corresponding applications in sustainable energy related areas based on first principles calculations. It is highlighted that different heterostructure types can be achieved in spite of the similar electronic structures of MX monolayers. Meanwhile, the potential applications of the heterostructures for sustainable energy related areas have been further unraveled. For instance, type-II InS/GaSe and GaS/GaSe vdW heterostructures can separately produce hydrogen and oxygen at the opposite parts. On the other hand, a type-II GaSe/GaTe heterostructure with a direct band gap compatible with silicon has been proposed to be a potential solar cell material with a power conversion efficiency over 18%. Furthermore, a gapless type-IV semi-metallic InTe/GaS heterostructure has been predicted to be a Li-ion battery anode material based on three-step lithiated analysis. The present results will shed light on the sustainable energy applications of such remarkable artificial MX vdW heterostructures in the future.

Keyword:

Community:

  • [ 1 ] [Chen, Jianhui]Fuzhou Univ, Coll Mat Sci & Engn, Key Lab Ecomat Adv Technol, Fuzhou 350108, Fujian, Peoples R China
  • [ 2 ] [He, Xiaojun]Fuzhou Univ, Coll Mat Sci & Engn, Key Lab Ecomat Adv Technol, Fuzhou 350108, Fujian, Peoples R China
  • [ 3 ] [Sa, Baisheng]Fuzhou Univ, Coll Mat Sci & Engn, Key Lab Ecomat Adv Technol, Fuzhou 350108, Fujian, Peoples R China
  • [ 4 ] [Wen, Cuilian]Fuzhou Univ, Coll Mat Sci & Engn, Key Lab Ecomat Adv Technol, Fuzhou 350108, Fujian, Peoples R China
  • [ 5 ] [Zhou, Jian]Beihang Univ, Sch Mat Sci & Engn, Beijing 100191, Peoples R China
  • [ 6 ] [Sun, Zhimei]Beihang Univ, Sch Mat Sci & Engn, Beijing 100191, Peoples R China
  • [ 7 ] [Zhou, Jian]Beihang Univ, Ctr Integrated Computat Mat Sci, Int Res Inst Multidisciplinary Sci, Beijing 100191, Peoples R China
  • [ 8 ] [Sun, Zhimei]Beihang Univ, Ctr Integrated Computat Mat Sci, Int Res Inst Multidisciplinary Sci, Beijing 100191, Peoples R China
  • [ 9 ] [Xu, Chao]Xiamen Talentmats New Mat Sci & Technol Co Ltd, Xiamen 361015, Peoples R China

Reprint 's Address:

  • 萨百晟

    [Sa, Baisheng]Fuzhou Univ, Coll Mat Sci & Engn, Key Lab Ecomat Adv Technol, Fuzhou 350108, Fujian, Peoples R China;;[Sun, Zhimei]Beihang Univ, Sch Mat Sci & Engn, Beijing 100191, Peoples R China;;[Sun, Zhimei]Beihang Univ, Ctr Integrated Computat Mat Sci, Int Res Inst Multidisciplinary Sci, Beijing 100191, Peoples R China

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Source :

NANOSCALE

ISSN: 2040-3364

Year: 2019

Issue: 13

Volume: 11

Page: 6431-6444

6 . 8 9 5

JCR@2019

5 . 8 0 0

JCR@2023

ESI Discipline: PHYSICS;

ESI HC Threshold:138

JCR Journal Grade:1

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count: 94

SCOPUS Cited Count: 97

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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