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author:

Wang, L. (Wang, L..) [1] | Zhu, M. (Zhu, M..) [2] | Shao, Y. (Shao, Y..) [3] | Zhao, Y. (Zhao, Y..) [4] | Wei, C. (Wei, C..) [5] | Gao, L. (Gao, L..) [6] | Bao, Y. (Bao, Y..) [7]

Indexed by:

Scopus

Abstract:

Sensors that have low power consumption, high scalability and the ability of rapidly detecting multitudinous external stimulus are of great value in cyber-physical interactive applications. Herein, we reported the fabrication of ferroelectric barium strontium titanate ((Ba70Sr30)TiO3, BST) thin films on silicon substrates by magnetron sputtering. The as-grown BST films have a pure perovskite structure and exhibit excellent ferroelectric characteristics, such as a remnant polarization of 2.4 μC/cm2, a ferro-to-paraelectric (tetragonal-to-cubic) phase transition temperature of 31.2 °C, and a broad optical bandgap of 3.58 eV. Capacitor-based sensors made from the BST films have shown an outstanding average sensitivity of 0.10 mV·Pa-1 in the 10-80 kPa regime and work extremely steadily over 1000 cycles. More importantly, utilizing the Pockels effect, optical manipulation in BST can be also realized by a smaller bias and its electro-optic coefficient reff is estimated to be 83.5 pmV-1, which is 2.6 times larger than in the current standard material (LiNbO3) for electro-optical devices. Our work established BST thin film as a powerful design paradigm toward on-chip integrations with diverse electronics into sensors via CMOS-comparable technique.

Keyword:

barium strontium titanate force optical manipulation Pockels effect sensor

Community:

  • [ 1 ] [Wang, L.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
  • [ 2 ] [Zhu, M.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
  • [ 3 ] [Zhu, M.]FZU-Jinjiang Joint Institute of Microelectronics, Fuzhou University, Jinjiang Science and Education Park, China
  • [ 4 ] [Shao, Y.]FZU-Jinjiang Joint Institute of Microelectronics, Fuzhou University, Jinjiang Science and Education Park, China
  • [ 5 ] [Zhao, Y.]School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue639798, Singapore
  • [ 6 ] [Wei, C.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
  • [ 7 ] [Gao, L.]FZU-Jinjiang Joint Institute of Microelectronics, Fuzhou University, Jinjiang Science and Education Park, China
  • [ 8 ] [Bao, Y.]Academy of Hi-Tech Research, Hunan Institute of Traffic Engineering, Hengyang 421099, China

Reprint 's Address:

  • [Zhu, M.]College of Physics and Information Engineering, China;;[Bao, Y.]Academy of Hi-Tech Research, China

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Source :

Sensors (Basel, Switzerland)

ISSN: 1424-8220

Year: 2022

Issue: 19

Volume: 22

3 . 0 3 1

JCR@2018

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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